infrared led chip gaas/gaa s 1. material substrate gaas (n type) epitaxial layer gaas (p/n type) 2. electrode n(cathode) side gold alloy p(anode) side aluminum alloy 3. electro-optical parameter min typ max unit condition characteristics f orward voltag e 1.25 1.35 v if=20ma reverse voltag e 8v ir=10ua power a 1.09 b 1.17 c 1.24 d 1.32 e 1.39 f 1.47 g 1.55 g1 1.64 940 nm if=20ma 45 nm if=20ma note : led chip is mounted on to-18 gold header without resin coati 4. mechanical data (a) emission area ---------------------------- - 8mil x 8mil (b) bottom area ---------------------------- - 9mil x 9mil (c) bonding pad ---------------------------- - 100um (d) chip thickness ------------------------------- 9mil (e) junction height ------------------------------- 6.0mil epi epi p n p side electrode n side electrode eoyang factory,513-5 eoyang-dong, iksan, 570-210, korea tel. +82 63 839 1111 fax. +82 63 835 8259 www.auk.co.kr auk corp. if=20ma po mw wavelength ? p OPA9423AL v r v f symbol (e) (d) substrate (c) (a) (b)
|
